High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

• المؤلفون الرئيسيون: Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
• مؤلفون آخرون: Temasek Laboratories
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98599; http://hdl.handle.net/10220/25657
• المؤسسة: Nanyang Technological University

We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity current gain cutoff frequency (fT) of 64 GHz and, a maximum oscillation frequency [fmax (U)/ fmax (MSG)] of 72/106 GHz. The product fmax(U) × Lg=12.24 GHz· μm is the highest value ever reported for InAlN/GaN HEMTs on Si substrate. At Vd=4 V and Vg=-2.25 V, the device exhibited a minimum noise figure (NFmin) of 1.16 dB for 10 GHz and 1.76 dB for 18 GHz. Small variation of NFmin (<;0.5 dB) from 8% to 48% with IDmax (100-636 mA/mm) was observed.