Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with dev...

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Bibliographic Details
Main Authors:	Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2015
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Online Access:	https://hdl.handle.net/10356/107107 http://hdl.handle.net/10220/25288
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

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