Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

10.1109/LED.2006.882567

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Bibliographic Details
Main Authors: Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Breakdown voltage
CMOS
Diode
Leakage
Low-frequency noise
NiSi salicidation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82971
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82971

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