Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
10.1109/LED.2006.882567
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Main Authors: | , , , , , , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82971 |
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Institution: | National University of Singapore |