Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs

10.1109/LED.2003.819274

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Bibliographic Details
Main Authors: Yu, D.S., Wu, C.H., Huang, C.H., Chin, A., Chen, W.J., Zhu, C., Li, M.F., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
MOSFET
NiGe
NiSi
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82390
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82390

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