Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

• Main Authors: Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Breakdown voltage; CMOS; Diode; Leakage; Low-frequency noise; NiSi salicidation
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82971
• Institution: National University of Singapore

10.1109/LED.2006.882567