Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

10.1109/LED.2006.882567

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Bibliographic Details
Main Authors:	Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Breakdown voltage CMOS Diode Leakage Low-frequency noise NiSi salicidation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82971
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82971
record_format	dspace
spelling	sg-nus-scholar.10635-829712023-10-29T20:45:05Z Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology Yang, R. Loh, W.Y. Yu, M.B. Xiong, Y-.Z. Choy, S.F. Jiang, Y. Chan, D.S.H. Lim, Y.F. Bera, L.K. Wong, L.Y. Li, W.H. Du, A.Y. Tung, C.H. Hoe, K.M. Lo, G.Q. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Breakdown voltage CMOS Diode Leakage Low-frequency noise NiSi salicidation 10.1109/LED.2006.882567 IEEE Electron Device Letters 27 10 824-826 EDLED 2014-10-07T04:35:42Z 2014-10-07T04:35:42Z 2006 Article Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006). Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology. IEEE Electron Device Letters 27 (10) : 824-826. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882567 07413106 http://scholarbank.nus.edu.sg/handle/10635/82971 000240925900011 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Breakdown voltage CMOS Diode Leakage Low-frequency noise NiSi salicidation
spellingShingle	Breakdown voltage CMOS Diode Leakage Low-frequency noise NiSi salicidation Yang, R. Loh, W.Y. Yu, M.B. Xiong, Y-.Z. Choy, S.F. Jiang, Y. Chan, D.S.H. Lim, Y.F. Bera, L.K. Wong, L.Y. Li, W.H. Du, A.Y. Tung, C.H. Hoe, K.M. Lo, G.Q. Balasubramanian, N. Kwong, D.-L. Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
description	10.1109/LED.2006.882567
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, R. Loh, W.Y. Yu, M.B. Xiong, Y-.Z. Choy, S.F. Jiang, Y. Chan, D.S.H. Lim, Y.F. Bera, L.K. Wong, L.Y. Li, W.H. Du, A.Y. Tung, C.H. Hoe, K.M. Lo, G.Q. Balasubramanian, N. Kwong, D.-L.
format	Article
author	Yang, R. Loh, W.Y. Yu, M.B. Xiong, Y-.Z. Choy, S.F. Jiang, Y. Chan, D.S.H. Lim, Y.F. Bera, L.K. Wong, L.Y. Li, W.H. Du, A.Y. Tung, C.H. Hoe, K.M. Lo, G.Q. Balasubramanian, N. Kwong, D.-L.
author_sort	Yang, R.
title	Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
title_short	Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
title_full	Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
title_fullStr	Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
title_full_unstemmed	Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
title_sort	reduction of leakage and low-frequency noise in mos transistors through two-step rta of nisi-silicide technology
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82971
_version_	1781784264387330048

Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

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