Crystallization and optoelectronic properties of indium-Zinc-Oxide thin films annealed in argon and vacuum

by Choy, S.F., Gong, H., Zhu, F.
Published 2014

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

by Toh, E.-H., Wang, G.H., Lo, G.-Q., Choy, S.-F., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Surfactant effect of arsenic doping on modification of ZnO (0001) growth kinetics

by Ye, J.D., Tan, S.T., Pannirselvam, S., Choy, S.F., Sun, X.W., Lo, G.Q., Teo, K.L.
Published 2014

High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing

by Wang, G.H., Toh, E.-H., Foo, Y.-L., Tung, C.-H., Choy, S.-F., Samudra, G., Yeo, Y.-C.
Published 2014

Source/drain germanium condensation for P-channel strained ultra-thin body transistors

by Chui, K.-J., Ang, K.-W., Madan, A., Wang, H., Tung, C.-H., Wong, L.-Y., Wang, Y., Choy, S.-F., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Published 2014

Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

by Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Published 2014