Source/drain germanium condensation for P-channel strained ultra-thin body transistors

Source/drain germanium condensation for P-channel strained ultra-thin body transistors

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Chui, K.-J., Ang, K.-W., Madan, A., Wang, H., Tung, C.-H., Wong, L.-Y., Wang, Y., Choy, S.-F., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84207
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84207

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