Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance

Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance

10.1109/LED.2007.896802

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Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Madan, A., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge condensation
P-MOSFETs
Silicon-germanium (SiGe)
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83087
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83087

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