Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance

10.1109/LED.2007.896802

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Bibliographic Details
Main Authors:	Ang, K.-W., Chui, K.-J., Madan, A., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Ge condensation P-MOSFETs Silicon-germanium (SiGe) Strain
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83087
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83087
record_format	dspace
spelling	sg-nus-scholar.10635-830872023-10-29T20:58:07Z Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance Ang, K.-W. Chui, K.-J. Madan, A. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Ge condensation P-MOSFETs Silicon-germanium (SiGe) Strain 10.1109/LED.2007.896802 IEEE Electron Device Letters 28 6 509-512 EDLED 2014-10-07T04:37:06Z 2014-10-07T04:37:06Z 2007-06 Article Ang, K.-W., Chui, K.-J., Madan, A., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-06). Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance. IEEE Electron Device Letters 28 (6) : 509-512. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.896802 07413106 http://scholarbank.nus.edu.sg/handle/10635/83087 000246822000013 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ge condensation P-MOSFETs Silicon-germanium (SiGe) Strain
spellingShingle	Ge condensation P-MOSFETs Silicon-germanium (SiGe) Strain Ang, K.-W. Chui, K.-J. Madan, A. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C. Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
description	10.1109/LED.2007.896802
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Chui, K.-J. Madan, A. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Chui, K.-J. Madan, A. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
title_short	Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
title_full	Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
title_fullStr	Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
title_full_unstemmed	Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
title_sort	strained thin-body p-mosfet with condensed silicon-germanium source/ drain for enhanced drive current performance
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83087
_version_	1781784296998043648

Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance

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