Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance

• Main Authors: Ang, K.-W., Chui, K.-J., Madan, A., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Ge condensation; P-MOSFETs; Silicon-germanium (SiGe); Strain
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83087
• Institution: National University of Singapore

10.1109/LED.2007.896802