Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology

Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology

10.1143/JJAP.47.3015

Saved in:
Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Wang, X., Hoe, K.-M., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Excimer laser
Ge-condensation
Silicon-germanium
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83076
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83076

Similar Items