Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology
10.1143/JJAP.47.3015
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2014
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sg-nus-scholar.10635-830762023-10-29T20:57:56Z Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology Wang, G.H. Toh, E.-H. Wang, X. Hoe, K.-M. Tripathy, S. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Excimer laser Ge-condensation Silicon-germanium Strain 10.1143/JJAP.47.3015 Japanese Journal of Applied Physics 47 4 PART 2 3015-3019 JAPND 2014-10-07T04:36:58Z 2014-10-07T04:36:58Z 2008-04-25 Article Wang, G.H., Toh, E.-H., Wang, X., Hoe, K.-M., Tripathy, S., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology. Japanese Journal of Applied Physics 47 (4 PART 2) : 3015-3019. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.3015 00214922 http://scholarbank.nus.edu.sg/handle/10635/83076 000255449100150 Scopus |
| institution |
National University of Singapore |
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NUS Library |
| continent |
Asia |
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Singapore Singapore |
| content_provider |
NUS Library |
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ScholarBank@NUS |
| topic |
Excimer laser Ge-condensation Silicon-germanium Strain |
| spellingShingle |
Excimer laser Ge-condensation Silicon-germanium Strain Wang, G.H. Toh, E.-H. Wang, X. Hoe, K.-M. Tripathy, S. Samudra, G.S. Yeo, Y.-C. Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| description |
10.1143/JJAP.47.3015 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Wang, X. Hoe, K.-M. Tripathy, S. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Wang, G.H. Toh, E.-H. Wang, X. Hoe, K.-M. Tripathy, S. Samudra, G.S. Yeo, Y.-C. |
| author_sort |
Wang, G.H. |
| title |
Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| title_short |
Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| title_full |
Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| title_fullStr |
Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| title_full_unstemmed |
Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| title_sort |
strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83076 |
| _version_ |
1781784294139625472 |