Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

10.1143/JJAP.46.2062

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Tung, C.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Epitaxy
Ge-condensation
Mobility
Silicon-germanium
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83085
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83085

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