Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

10.1143/JJAP.46.2062

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Tung, C.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Epitaxy
Ge-condensation
Mobility
Silicon-germanium
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83085
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-830852024-11-09T07:32:18Z Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement Wang, G.H. Toh, E.-H. Tung, C.-H. Du, A. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Epitaxy Ge-condensation Mobility Silicon-germanium Strain 10.1143/JJAP.46.2062 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 4 B 2062-2066 JAPND 2014-10-07T04:37:05Z 2014-10-07T04:37:05Z 2007-04-24 Article Wang, G.H., Toh, E.-H., Tung, C.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007-04-24). Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B) : 2062-2066. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.46.2062 00214922 http://scholarbank.nus.edu.sg/handle/10635/83085 000247050200049 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Epitaxy
Ge-condensation
Mobility
Silicon-germanium
Strain
spellingShingle Epitaxy
Ge-condensation
Mobility
Silicon-germanium
Strain
Wang, G.H.
Toh, E.-H.
Tung, C.-H.
Du, A.
Lo, G.-Q.
Samudra, G.
Yeo, Y.-C.
Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
description 10.1143/JJAP.46.2062
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wang, G.H.
Toh, E.-H.
Tung, C.-H.
Du, A.
Lo, G.-Q.
Samudra, G.
Yeo, Y.-C.
format Article
author Wang, G.H.
Toh, E.-H.
Tung, C.-H.
Du, A.
Lo, G.-Q.
Samudra, G.
Yeo, Y.-C.
author_sort Wang, G.H.
title Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
title_short Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
title_full Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
title_fullStr Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
title_full_unstemmed Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
title_sort strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83085
_version_ 1821191228072394752

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