Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors

• Main Authors: Wang, G.H., Toh, E.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Ge condensation; Mobility; Silicon-germanium (SiGe); Strain; Uniaxial
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83086

10.1109/LED.2007.910784