Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors

10.1109/LED.2007.910784

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge condensation
Mobility
Silicon-germanium (SiGe)
Strain
Uniaxial
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83086
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Institution: National University of Singapore

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