Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology

Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology

10.1016/j.tsf.2005.09.033

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Bibliographic Details
Main Authors: Li, R., Yao, H.B., Lee, S.J., Chi, D.Z., Yu, M.B., Lo, G.Q., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Germanide
Germanium (Ge)
MOSFET
Schottky
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83945
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83945

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