Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
10.1016/j.tsf.2005.09.033
Saved in:
Main Authors: | Li, R., Yao, H.B., Lee, S.J., Chi, D.Z., Yu, M.B., Lo, G.Q., Kwong, D.L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83945 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
by: Li, R., et al.
Published: (2014) -
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
by: Li, R., et al.
Published: (2014) -
Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014) -
Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology
by: LI RUI
Published: (2010) -
Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure
by: ZHANG QINGCHUN
Published: (2010)