Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

10.1109/LED.2006.874209

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Bibliographic Details
Main Authors: Wu, N., Zhang, Q., Chan, D.S.H., Balasubramanian, N., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Chemical vapor deposited (CVD)
Germanium (Ge)
HfO2
High-κ
MOSFET
Surface passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82400
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82400

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