Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

10.1109/LED.2006.874209

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Bibliographic Details
Main Authors:	Wu, N., Zhang, Q., Chan, D.S.H., Balasubramanian, N., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Chemical vapor deposited (CVD) Germanium (Ge) HfO2 High-κ MOSFET Surface passivation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82400
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82400
record_format	dspace
spelling	sg-nus-scholar.10635-824002024-11-11T07:32:32Z Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation Wu, N. Zhang, Q. Chan, D.S.H. Balasubramanian, N. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Chemical vapor deposited (CVD) Germanium (Ge) HfO2 High-κ MOSFET Surface passivation 10.1109/LED.2006.874209 IEEE Electron Device Letters 27 6 479-481 EDLED 2014-10-07T04:28:57Z 2014-10-07T04:28:57Z 2006-06 Article Wu, N., Zhang, Q., Chan, D.S.H., Balasubramanian, N., Zhu, C. (2006-06). Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation. IEEE Electron Device Letters 27 (6) : 479-481. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.874209 07413106 http://scholarbank.nus.edu.sg/handle/10635/82400 000238070500018 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Chemical vapor deposited (CVD) Germanium (Ge) HfO2 High-κ MOSFET Surface passivation
spellingShingle	Chemical vapor deposited (CVD) Germanium (Ge) HfO2 High-κ MOSFET Surface passivation Wu, N. Zhang, Q. Chan, D.S.H. Balasubramanian, N. Zhu, C. Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
description	10.1109/LED.2006.874209
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wu, N. Zhang, Q. Chan, D.S.H. Balasubramanian, N. Zhu, C.
format	Article
author	Wu, N. Zhang, Q. Chan, D.S.H. Balasubramanian, N. Zhu, C.
author_sort	Wu, N.
title	Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
title_short	Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
title_full	Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
title_fullStr	Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
title_full_unstemmed	Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
title_sort	gate-first germanium nmosfet with cvd hfo2 gate dielectric and silicon surface passivation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82400
_version_	1821216016785473536

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

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