Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode

10.1109/LED.2006.874128

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Bibliographic Details
Main Authors: Li, R., Lee, S.J., Yao, H.B., Chi, D.Z., Yu, M.B., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium
High-κ
Metal gate
MOSFET
Schottky
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82942
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82942

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