Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs

Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs

10.1109/TED.2005.857188

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Bibliographic Details
Main Authors: Low, T., Li, M.-F., Samudra, G., Yeo, Y.-C., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium
Mobility
Silicon
Surface roughness
Ultrathin-body (UTB) MOSFETs
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82712
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82712

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