Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs

• Main Authors: Low, T., Li, M.-F., Samudra, G., Yeo, Y.-C., Zhu, C., Chin, A., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Germanium; Mobility; Silicon; Surface roughness; Ultrathin-body (UTB) MOSFETs
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82712
• Institution: National University of Singapore

10.1109/TED.2005.857188