Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors

• Main Authors: Ang, K.-W., Zhu, S.-Y., Wang, J., Chua, K.-T., Yu, M.-B., Lo, G.-Q., Kwong, D.-L.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Germanium-on-silicon-on-insulator (Ge-on-SOI); Metal-semiconductor-metal (MSM) photodetector; Schottky barrier; Silicon-carbon (Si:C)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/97369
• Institution: National University of Singapore

10.1109/LED.2008.923540