Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors

10.1109/LED.2008.923540

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Bibliographic Details
Main Authors:	Ang, K.-W., Zhu, S.-Y., Wang, J., Chua, K.-T., Yu, M.-B., Lo, G.-Q., Kwong, D.-L.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	Germanium-on-silicon-on-insulator (Ge-on-SOI) Metal-semiconductor-metal (MSM) photodetector Schottky barrier Silicon-carbon (Si:C)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/97369
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-97369
record_format	dspace
spelling	sg-nus-scholar.10635-973692023-10-26T09:05:07Z Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors Ang, K.-W. Zhu, S.-Y. Wang, J. Chua, K.-T. Yu, M.-B. Lo, G.-Q. Kwong, D.-L. PHYSICS Germanium-on-silicon-on-insulator (Ge-on-SOI) Metal-semiconductor-metal (MSM) photodetector Schottky barrier Silicon-carbon (Si:C) 10.1109/LED.2008.923540 IEEE Electron Device Letters 29 7 704-707 EDLED 2014-10-16T09:34:27Z 2014-10-16T09:34:27Z 2008-07 Article Ang, K.-W., Zhu, S.-Y., Wang, J., Chua, K.-T., Yu, M.-B., Lo, G.-Q., Kwong, D.-L. (2008-07). Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors. IEEE Electron Device Letters 29 (7) : 704-707. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923540 07413106 http://scholarbank.nus.edu.sg/handle/10635/97369 000257626000016 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Germanium-on-silicon-on-insulator (Ge-on-SOI) Metal-semiconductor-metal (MSM) photodetector Schottky barrier Silicon-carbon (Si:C)
spellingShingle	Germanium-on-silicon-on-insulator (Ge-on-SOI) Metal-semiconductor-metal (MSM) photodetector Schottky barrier Silicon-carbon (Si:C) Ang, K.-W. Zhu, S.-Y. Wang, J. Chua, K.-T. Yu, M.-B. Lo, G.-Q. Kwong, D.-L. Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
description	10.1109/LED.2008.923540
author2	PHYSICS
author_facet	PHYSICS Ang, K.-W. Zhu, S.-Y. Wang, J. Chua, K.-T. Yu, M.-B. Lo, G.-Q. Kwong, D.-L.
format	Article
author	Ang, K.-W. Zhu, S.-Y. Wang, J. Chua, K.-T. Yu, M.-B. Lo, G.-Q. Kwong, D.-L.
author_sort	Ang, K.-W.
title	Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
title_short	Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
title_full	Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
title_fullStr	Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
title_full_unstemmed	Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
title_sort	novel silicon-carbon (si:c) schottky barrier enhancement layer for dark-current suppression in ge-on-soi msm photodetectors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/97369
_version_	1781786658146877440

Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors

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