Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

10.1109/LED.2011.2167650

Saved in:
Bibliographic Details
Main Authors: Tong, Y., Zhou, Q., Chua, L.H., Thanigaivelan, T., Henry, T., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Carbon
Germanium
Ion implantation
Schottky diodes
Silicides
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82495
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82495

Similar Items