Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering

Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering

10.1109/TED.2013.2248367

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Bibliographic Details
Main Authors: Zhou, Q., Koh, S.-M., Thanigaivelan, T., Henry, T., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Aluminum
contact resistance
ion implant
Schottky barrier
silicon carbon
single-metal-silicide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82085
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82085

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