Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering

• Main Authors: Zhou, Q., Koh, S.-M., Thanigaivelan, T., Henry, T., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Aluminum; contact resistance; ion implant; Schottky barrier; silicon carbon; single-metal-silicide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82085
• Institution: National University of Singapore

10.1109/TED.2013.2248367