Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain

Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain

10.1109/TED.2009.2016143

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Bibliographic Details
Main Authors: Wong, H.-S., Ang, K.-W., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Contact resistance
Silicide
Strain
Strained silicon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82087
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82087

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