Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain

10.1109/TED.2009.2016143

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Main Authors: Wong, H.-S., Ang, K.-W., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82087
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spelling sg-nus-scholar.10635-820872023-10-26T09:05:25Z Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain Wong, H.-S. Ang, K.-W. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact resistance Silicide Strain Strained silicon 10.1109/TED.2009.2016143 IEEE Transactions on Electron Devices 56 5 1128-1134 IETDA 2014-10-07T04:25:15Z 2014-10-07T04:25:15Z 2009 Article Wong, H.-S., Ang, K.-W., Chan, L., Samudra, G., Yeo, Y.-C. (2009). Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain. IEEE Transactions on Electron Devices 56 (5) : 1128-1134. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2016143 00189383 http://scholarbank.nus.edu.sg/handle/10635/82087 000265712400058 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Contact resistance
Silicide
Strain
Strained silicon
spellingShingle Contact resistance
Silicide
Strain
Strained silicon
Wong, H.-S.
Ang, K.-W.
Chan, L.
Samudra, G.
Yeo, Y.-C.
Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
description 10.1109/TED.2009.2016143
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wong, H.-S.
Ang, K.-W.
Chan, L.
Samudra, G.
Yeo, Y.-C.
format Article
author Wong, H.-S.
Ang, K.-W.
Chan, L.
Samudra, G.
Yeo, Y.-C.
author_sort Wong, H.-S.
title Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
title_short Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
title_full Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
title_fullStr Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
title_full_unstemmed Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
title_sort contact resistance reduction technology using selenium egregation for n-mosfets with silicon-carbon source/drain
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82087
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