Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering
10.1109/TED.2013.2248367
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82085 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-82085 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-820852023-10-26T22:07:59Z Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering Zhou, Q. Koh, S.-M. Thanigaivelan, T. Henry, T. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Aluminum contact resistance ion implant Schottky barrier silicon carbon single-metal-silicide 10.1109/TED.2013.2248367 IEEE Transactions on Electron Devices 60 4 1310-1317 IETDA 2014-10-07T04:25:14Z 2014-10-07T04:25:14Z 2013 Article Zhou, Q., Koh, S.-M., Thanigaivelan, T., Henry, T., Yeo, Y.-C. (2013). Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering. IEEE Transactions on Electron Devices 60 (4) : 1310-1317. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2248367 00189383 http://scholarbank.nus.edu.sg/handle/10635/82085 000316821800004 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
Aluminum contact resistance ion implant Schottky barrier silicon carbon single-metal-silicide |
| spellingShingle |
Aluminum contact resistance ion implant Schottky barrier silicon carbon single-metal-silicide Zhou, Q. Koh, S.-M. Thanigaivelan, T. Henry, T. Yeo, Y.-C. Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| description |
10.1109/TED.2013.2248367 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Zhou, Q. Koh, S.-M. Thanigaivelan, T. Henry, T. Yeo, Y.-C. |
| format |
Article |
| author |
Zhou, Q. Koh, S.-M. Thanigaivelan, T. Henry, T. Yeo, Y.-C. |
| author_sort |
Zhou, Q. |
| title |
Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| title_short |
Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| title_full |
Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| title_fullStr |
Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| title_full_unstemmed |
Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| title_sort |
contact resistance reduction for strained n-mosfets with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82085 |
| _version_ |
1781784056937054208 |