Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

10.1109/LED.2011.2167650

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Bibliographic Details
Main Authors: Tong, Y., Zhou, Q., Chua, L.H., Thanigaivelan, T., Henry, T., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Carbon
Germanium
Ion implantation
Schottky diodes
Silicides
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82495
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Institution: National University of Singapore
id sg-nus-scholar.10635-82495
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spelling sg-nus-scholar.10635-824952024-11-10T04:42:25Z Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant Tong, Y. Zhou, Q. Chua, L.H. Thanigaivelan, T. Henry, T. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Carbon Germanium Ion implantation Schottky diodes Silicides 10.1109/LED.2011.2167650 IEEE Electron Device Letters 32 12 1734-1736 EDLED 2014-10-07T04:30:04Z 2014-10-07T04:30:04Z 2011-12 Article Tong, Y., Zhou, Q., Chua, L.H., Thanigaivelan, T., Henry, T., Yeo, Y.-C. (2011-12). Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant. IEEE Electron Device Letters 32 (12) : 1734-1736. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2167650 07413106 http://scholarbank.nus.edu.sg/handle/10635/82495 000297352500029 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Carbon
Germanium
Ion implantation
Schottky diodes
Silicides
spellingShingle Carbon
Germanium
Ion implantation
Schottky diodes
Silicides
Tong, Y.
Zhou, Q.
Chua, L.H.
Thanigaivelan, T.
Henry, T.
Yeo, Y.-C.
Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
description 10.1109/LED.2011.2167650
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Tong, Y.
Zhou, Q.
Chua, L.H.
Thanigaivelan, T.
Henry, T.
Yeo, Y.-C.
format Article
author Tong, Y.
Zhou, Q.
Chua, L.H.
Thanigaivelan, T.
Henry, T.
Yeo, Y.-C.
author_sort Tong, Y.
title Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
title_short Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
title_full Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
title_fullStr Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
title_full_unstemmed Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
title_sort impact of a germanium and carbon preamorphization implant on the electrical characteristics of nisi/si contacts with a presilicide sulfur implant
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82495
_version_ 1821191227809202176

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