Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts

Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts

10.1109/LED.2007.910003

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Bibliographic Details
Main Authors: Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Contact resistance
Effective Schottky barrier
Schottky barriers
Selenium
Sulfur
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55766
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55766

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