Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
10.1016/j.sse.2006.05.023
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| Main Authors: | , |
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| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82175 |
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| Institution: | National University of Singapore |