Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

10.1016/j.sse.2006.05.023

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Bibliographic Details
Main Authors:	Zhu, S., Li, M.F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Schottky barrier height Schottky barrier source/drain Silicide Strained-Si
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82175
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82175
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spelling	sg-nus-scholar.10635-821752023-10-29T23:35:15Z Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction Zhu, S. Li, M.F. ELECTRICAL & COMPUTER ENGINEERING Schottky barrier height Schottky barrier source/drain Silicide Strained-Si 10.1016/j.sse.2006.05.023 Solid-State Electronics 50 7-8 1337-1340 SSELA 2014-10-07T04:26:16Z 2014-10-07T04:26:16Z 2006-07 Article Zhu, S., Li, M.F. (2006-07). Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction. Solid-State Electronics 50 (7-8) : 1337-1340. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2006.05.023 00381101 http://scholarbank.nus.edu.sg/handle/10635/82175 000240668200027 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Schottky barrier height Schottky barrier source/drain Silicide Strained-Si
spellingShingle	Schottky barrier height Schottky barrier source/drain Silicide Strained-Si Zhu, S. Li, M.F. Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
description	10.1016/j.sse.2006.05.023
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhu, S. Li, M.F.
format	Article
author	Zhu, S. Li, M.F.
author_sort	Zhu, S.
title	Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
title_short	Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
title_full	Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
title_fullStr	Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
title_full_unstemmed	Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
title_sort	drivability improvement in schottky barrier source/drain mosfets with strained-si channel by schottky barrier height reduction
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82175
_version_	1781784074064494592

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

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