Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts

10.1109/LED.2007.910003

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Main Authors: Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/55766
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spelling sg-nus-scholar.10635-557662024-11-09T07:32:19Z Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts Wong, H.-S. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact resistance Effective Schottky barrier Schottky barriers Selenium Sulfur 10.1109/LED.2007.910003 IEEE Electron Device Letters 28 12 1102-1104 EDLED 2014-06-17T02:46:52Z 2014-06-17T02:46:52Z 2007-12 Article Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2007-12). Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts. IEEE Electron Device Letters 28 (12) : 1102-1104. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910003 07413106 http://scholarbank.nus.edu.sg/handle/10635/55766 000251429800009 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Contact resistance
Effective Schottky barrier
Schottky barriers
Selenium
Sulfur
spellingShingle Contact resistance
Effective Schottky barrier
Schottky barriers
Selenium
Sulfur
Wong, H.-S.
Chan, L.
Samudra, G.
Yeo, Y.-C.
Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
description 10.1109/LED.2007.910003
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wong, H.-S.
Chan, L.
Samudra, G.
Yeo, Y.-C.
format Article
author Wong, H.-S.
Chan, L.
Samudra, G.
Yeo, Y.-C.
author_sort Wong, H.-S.
title Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
title_short Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
title_full Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
title_fullStr Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
title_full_unstemmed Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
title_sort effective schottky barrier height reduction using sulfur or selenium at the nisi/n-si (100) interface for low resistance contacts
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/55766
_version_ 1821190601002975232