Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation

Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation

10.1109/LED.2007.901668

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Bibliographic Details
Main Authors: Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Antimony
NiSi
Schottky barrier (SB)
Segregation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83106
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83106

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