Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
10.1109/LED.2007.901668
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83106 |
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| Institution: | National University of Singapore |