Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing

Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing

10.1016/S0038-1101(02)00322-2

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Bibliographic Details
Main Authors: Li, B., Chua, S.-J., Nikolai, Y., Wang, L., Sia, E.-K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Annealing
Metal-semiconductor contact
Schottky barrier height
SiGeC alloy
Titanium
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57139
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/57139

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