Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing

10.1016/S0038-1101(02)00322-2

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Main Authors: Li, B., Chua, S.-J., Nikolai, Y., Wang, L., Sia, E.-K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57139
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-571392023-10-31T07:21:52Z Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing Li, B. Chua, S.-J. Nikolai, Y. Wang, L. Sia, E.-K. ELECTRICAL & COMPUTER ENGINEERING Annealing Metal-semiconductor contact Schottky barrier height SiGeC alloy Titanium 10.1016/S0038-1101(02)00322-2 Solid-State Electronics 47 4 601-605 SSELA 2014-06-17T03:02:44Z 2014-06-17T03:02:44Z 2003-04 Article Li, B., Chua, S.-J., Nikolai, Y., Wang, L., Sia, E.-K. (2003-04). Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing. Solid-State Electronics 47 (4) : 601-605. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(02)00322-2 00381101 http://scholarbank.nus.edu.sg/handle/10635/57139 000181539300002 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Annealing
Metal-semiconductor contact
Schottky barrier height
SiGeC alloy
Titanium
spellingShingle Annealing
Metal-semiconductor contact
Schottky barrier height
SiGeC alloy
Titanium
Li, B.
Chua, S.-J.
Nikolai, Y.
Wang, L.
Sia, E.-K.
Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
description 10.1016/S0038-1101(02)00322-2
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Li, B.
Chua, S.-J.
Nikolai, Y.
Wang, L.
Sia, E.-K.
format Article
author Li, B.
Chua, S.-J.
Nikolai, Y.
Wang, L.
Sia, E.-K.
author_sort Li, B.
title Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
title_short Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
title_full Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
title_fullStr Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
title_full_unstemmed Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
title_sort properties of schottky contact of titanium on low doped p-type sigec alloy by rapid thermal annealing
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/57139
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