Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing

10.1016/S0038-1101(02)00322-2

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Bibliographic Details
Main Authors:	Li, B., Chua, S.-J., Nikolai, Y., Wang, L., Sia, E.-K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Annealing Metal-semiconductor contact Schottky barrier height SiGeC alloy Titanium
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57139
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Institution:	National University of Singapore

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