NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

10.1063/1.4772710

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Bibliographic Details
Main Authors: Lim, P.S.Y., Chi, D.Z., Zhou, Q., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82764
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82764

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