First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights

First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights

10.1088/0022-3727/44/40/405302

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Bibliographic Details
Main Authors: Wong, T.I., Yang, M., Feng, Y.P., Chi, D.Z., Wang, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96653
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/96653

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