First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights
10.1088/0022-3727/44/40/405302
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sg-nus-scholar.10635-966532023-10-31T20:23:51Z First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights Wong, T.I. Yang, M. Feng, Y.P. Chi, D.Z. Wang, S.J. PHYSICS 10.1088/0022-3727/44/40/405302 Journal of Physics D: Applied Physics 44 40 - JPAPB 2014-10-16T09:25:56Z 2014-10-16T09:25:56Z 2011 Article Wong, T.I., Yang, M., Feng, Y.P., Chi, D.Z., Wang, S.J. (2011). First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights. Journal of Physics D: Applied Physics 44 (40) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/44/40/405302 00223727 http://scholarbank.nus.edu.sg/handle/10635/96653 000295164100011 Scopus |
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10.1088/0022-3727/44/40/405302 |
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PHYSICS Wong, T.I. Yang, M. Feng, Y.P. Chi, D.Z. Wang, S.J. |
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Wong, T.I. Yang, M. Feng, Y.P. Chi, D.Z. Wang, S.J. |
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Wong, T.I. Yang, M. Feng, Y.P. Chi, D.Z. Wang, S.J. First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights |
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Wong, T.I. |
title |
First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights |
title_short |
First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights |
title_full |
First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights |
title_fullStr |
First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights |
title_full_unstemmed |
First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights |
title_sort |
first-principles study of nisi2/hfo2 interfaces: energetics and schottky-barrier heights |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/96653 |
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1781786510423490560 |