Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric

由 Liu, B., Lim, P.S.Y., Yeo, Y.-C.
出版 2014

Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts

由 Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C.
出版 2014

Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height

由 Lim, P.S.Y., Zhou, Q., Chi, D., Yeo, Y.-C.
出版 2014

NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

由 Lim, P.S.Y., Chi, D.Z., Zhou, Q., Yeo, Y.-C.
出版 2014

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

由 Lim, P.S.Y., Zhi Chi, D., Chong Lim, P., Yeo, Y.-C.
出版 2014

Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts

由 Tong, Y., Liu, B., Lim, P.S.Y., Zhou, Q., Yeo, Y.-C.
出版 2014

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

由 Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C.
出版 2014

Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs

由 Zhang, X., Guo, H., Chin, H.-C., Gong, X., Lim, P.S.Y., Yeo, Y.-C.
出版 2014

Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

由 Lim, P.S.Y., Chi, D.Z., Lim, P.C., Wang, X.C., Chan, T.K., Osipowicz, T., Yeo, Y.-C.
出版 2014

A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

由 Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Gyanathan, A., Zhou, Q., Tong, Y., Lim, P.S.-Y., Han, G., Yeo, Y.-C.
出版 2014

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

由 Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
出版 2014

Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

由 Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
出版 2014

High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain

由 Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Pulido, M., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
出版 2014

Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs

由 Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
出版 2014

The Lipid Paradox is present in ST-elevation but not in non-ST-elevation myocardial infarction patients: Insights from the Singapore Myocardial Infarction Registry

由 Sia, C.-H., Zheng, H., Ho, A.F.-W., Bulluck, H., Chong, J., Foo, D., Foo, L.-L., Lim, P.Z.Y., Liew, B.W., Tan, H.-C., Yeo, T.-C., Chua, T.S.J., Chan, M.Y.-Y., Hausenloy, D.J.
出版 2021

III-V MOSFETs with a new self-aligned contact

由 Zhang, X., Guo, H., Ko, C.-H., Wann, C.H., Cheng, C.-C., Lin, H.-Y., Chin, H.-C., Gong, X., Lim, P.S.Y., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Yeo., Y.-C.
出版 2014

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

由 Zhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C.
出版 2014