Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
10.1063/1.3197144
Saved in:
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82212 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |