Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

10.1063/1.3197144

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Bibliographic Details
Main Authors: Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82212
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Institution: National University of Singapore
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Summary:10.1063/1.3197144

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