Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

10.1063/1.3197144

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Bibliographic Details
Main Authors:	Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82212
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Institution:	National University of Singapore

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